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FDS5692Z N-Channel UltraFET Trench(R) MOSFET
February 2006
FDS5692Z
N-Channel UltraFET Trench(R) MOSFET
50V, 5.8A, 24m
General Description
This N-Channel UltraFET device has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
Features
Max rDS(on) = 24m at VGS = 10V, ID = 5.8A Max rDS(on) = 33m at VGS = 4.5V, ID = 5.6A ESD protection diode (note 3) Low Qgd Fast switching speed
Applications
DC/DC converter
D D
D
D
5 6 4 3 2 1
SO-8
S
S
S
G
7 8
MOSFET Maximum Ratings
Symbol
VDS VGS ID Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed EAS PD Single Pulse Avalanche Energy
TA=25oC unless otherwise noted
Parameter
Ratings
50 20
(Note 1a)
Units
V V A
5.8 40 72
mJ W
UltraFET Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
2.5 1.2 1.1 -55 to 150
TJ, TSTG
Operating and Storage Junction Temperature Range
C
Thermal Characteristics
RJA RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1c) (Note 1)
50 125 25
C/W
Package Marking and Ordering Information
Device Marking FDS5692Z
(c)2006 Fairchild Semiconductor Corporation FDS5692Z Rev C(W)
Device FDS5692Z
Package SO-8
Reel Size 13"
Tape width 12mm
Quantity 2500units
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FDS5692Z N-Channel UltraFET Trench(R) MOSFET
Electrical Characteristics
Symbol Parameter
Drain-Source Avalanche Energy (Single Pulse) Drain-Source Avalanche Current
TA = 25C unless otherwise noted
Test Conditions
Min
Typ
Max Units
Drain-Source Avalanche Ratings
EAS IAS VDD = 50 V, ID= 12 A, L=1mH 12 ID = 250 A 72 mJ A
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage
(Note 4)
VGS = 0 V,
50 48 1 10
V mV/C A A
ID = 250 A, Referenced to 25C VDS = 40 V VGS = 20V, VGS = 0 V VDS = 0 V
On Characteristics
VGS(th) VGS(th) TJ rDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance
VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C ID = 5.8 A VGS = 10 V, ID = 5.6 A VGS = 4.5 V, VGS = 10 V, ID = 5.8A, TJ = 125C
1
1.6 -6 20 26 32
3
V mV/C
24 33 41
m
Dynamic Characteristics
Ciss Coss Crss RG Qg(TOT) Qg(TOT) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge, VGS = 10V Total Gate Charge, VGS = 5V Gate-Source Gate Charge Gate-Drain Gate Charge
(Note 4)
VDS = 25 V, f = 1.0 MHz f = 1.0 MHz VDS = 25V,
V GS = 0 V,
1025 150 50 0.79 18 25 14
pF pF pF nC nC nC nC
ID = 5.8A
10 2.8 3.0
Switching Characteristics
td(on) tr td(off) tf Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
VDD = 25 V, VGS = 10 V,
ID = 5.8A, RGEN = 6
9 5 27 6
18 10 43 12
ns ns ns ns
FDS5692Z Rev C(W)
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FDS5692Z N-Channel UltraFET Trench(R) MOSFET
Electrical Characteristics
Symbol
VSD trr Qrr
TA = 25C unless otherwise noted
Parameter
Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Test Conditions
IS = 5.8 A IS = 2.9 A dIF/dt = 100A/s
Min
Typ
0.79 0.75 24 16
Max Units
1.25 1.0 V V ns nC
Drain-Source Diode Characteristics
VGS = 0 V, IF = 6A,
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a) 50C/W when 2 mounted on a 1in pad of 2 oz copper
b) 105C/W when 2 mounted on a .04 in pad of 2 oz copper
c) 125C/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
FDS5692Z Rev C(W)
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FDS5692Z N-Channel UltraFET Trench(R) MOSFET
Typical Characteristics
40
VGS = 10V 4.5V 4.0V
NORMALIZED DRAIN-SOURCE ON-RESISTANCE
2.4 VGS = 3.0V 2.2 2 1.8 3.5V 1.6 4.0V 1.4 1.2 10V 1 0.8 4.5V 5.0V 6.0V
ID, DRAIN CURRENT (A)
32
6.0V
24
3.5.V
16
3.0V
8
2.5V
0 0 1 2 3 VDS, DRAIN-SOURCE VOLTAGE (V) 4
0
10
20 ID, DRAIN CURRENT (A)
30
40
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.09 rDS(on), ON-RESISTANCE (OHM)
2 NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 -50
ID = 5.8A VGS = 5V
ID = 2.9A 0.07
0.05 TA = 125 C
o
0.03 TA = 25 C
o
0.01
-25
0
25
50
75
100
o
125
150
2
TJ, JUNCTION TEMPERATURE ( C)
4 6 8 VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 3. On-Resistance Variation with Temperature.
40
VDS = 5V TA = -55 C
o
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100
125 C
o
IS, REVERSE DRAIN CURRENT (A)
VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC
ID, DRAIN CURRENT (A)
30
25 C
o
20
0.01
10
0.001
0 0 1 2 3 4 VGS, GATE TO SOURCE VOLTAGE (V) 5
0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS5692Z Rev C(W)
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FDS5692Z N-Channel UltraFET Trench(R) MOSFET
Typical Characteristics
10
1500 ID = 5.8A f = 1MHz VGS = 0 V 1200 VDS = 20V 30V
VGS, GATE-SOURCE VOLTAGE (V)
8
6 25V 4
CAPACITANCE (pF)
900 Ciss 600 Coss 300 Crss
2
0 0 4 8 12 16 20
0 0 5 10 15 20 25 30
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100
P(pk), PEAK TRANSIENT POWER (W)
100s 1ms 10ms 100ms 1s 10s DC VGS = 10V SINGLE PULSE o RJA = 125 C/W TA = 25oC 40
Figure 8. Capacitance Characteristics.
RDS(ON) LIMIT
ID, DRAIN CURRENT (A)
10
30
SINGLE PULSE RJA = 125C/W TA = 25C
1
20
0.1
10
0.01 0.01
0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V)
100
0 0.001
0.01
0.1 1 t1, TIME (sec)
10
100
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum UltraFET Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
RJA(t) = r(t) * RJA RJA = 125 C/W
0.1
0.1 0.05 0.02
P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
0.01
0.01
SINGLE PULSE
0.001 0.0001
0.001
0.01
0.1 t1, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.
FDS5692Z Rev C(W)
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TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I18

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